Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
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چکیده
منابع مشابه
Ambipolar doping in SnO
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2019
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5088370